Photoluminescence from SiOx thin films: Effects of film thickness and annealing temperature

Nanotechnology

Volumn 15, Issue 5, 2004, Pages 494-500

  Fang, Y C ^a   Li, W Q ^a   Qi, L J ^a   Li, L Y ^a   Zhao, Y Y ^a   Zhang, Z J ^a   Lu, M ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EVAPORATION; MODIFICATION; NANOSTRUCTURED MATERIALS; NUCLEATION; PHASE SEPARATION; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SUBSTRATES;

ANNEALING TEMPERATURE; FILM THICKNESS; NUCLEATION BARRIER;

THIN FILMS;

EID: 2642528613     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/5/016     Document Type: Article

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