Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Edgington, Robert ^a   Sato, Syunsuke ^b   Ishiyama, Yuichiro ^b   Morris, Richard ^c   Jackman, Richard B ^a   Kawarada, Hiroshi ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b WASEDA UNIVERSITY   (Japan)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AC HALL EFFECT; BORON CONCENTRATIONS; BORON-DOPED DIAMOND FILMS; BORON-LAYERS; CUT-OFF; DIAMOND GROWTH; DIAMOND SURFACES; ELECTRICAL CHARACTERISATION; IMPEDANCE SPECTROSCOPY; SECONDARY ION MASS SPECTROSCOPY; SHEET CARRIER DENSITIES; TEMPERATURE DEPENDENT; THERMAL IMPEDANCE;

ACTIVATION ENERGY; BORON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; FIELD EFFECT TRANSISTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

ELECTRIC PROPERTIES;

EID: 84857412773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3682760     Document Type: Article

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