Surface conductive layers on (111) diamonds after oxygen treatments

Diamond and Related Materials

Volumn 15, Issue 4-8, 2006, Pages 692-697

  Ri, Sung Gi ^a,b   Nebel, Christoph E ^a   Takeuchi, Daisuke ^a,b   Rezek, Bohuslav ^a   Tokuda, Norio ^a   Yamasaki, Satoshi ^a,b   Okushi, Hideyo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Diamond film; Oxidation; Surface electronic properties; Surface structure

Indexed keywords

AIR; ANNEALING; CARBON; ELECTRIC CONDUCTIVITY; FERMI LEVEL; HALL EFFECT; HELIUM; HYDROGEN; MOLECULES; OXIDATION; OXYGEN; SURFACE STRUCTURE;

CHEMICAL OXIDATION; DIAMOND FILM; SCHOTTKY JUNCTION; SURFACE CONDUCTIVE LAYERS (SCL); SURFACE ELECTRONIC PROPERTIES;

DIAMONDS;

EID: 33745228049     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.12.013     Document Type: Article

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