Electronic properties of homoepitaxial (111) highly boron-doped diamond films

Journal of Applied Physics

Volumn 103, Issue 5, 2008, Pages

  Ye, Haitao ^a   Tumilty, Niall ^a   Bevilacqua, Mose ^a   Curat, Stephane ^a   Nesladek, Milos ^b   Bazin, Bertrand ^b   Bergonzo, Philippe ^b   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b CEA LIST   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRONIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTOR MATERIALS; TRANSISTORS;

BORON-DOPED DIAMOND FILMS; DIAMOND TRANSISTORS; TRANSISTOR STRUCTURES;

DIAMOND FILMS;

EID: 40849085440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2837114     Document Type: Article

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