Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 966-972

  Jingu, Yoshikatsu ^a   Hirama, Kazuyuki ^b   Kawarada, Hiroshi ^c  

^a SONY CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Contact; Diamond; Hydrogen; MOSFET; TiC

Indexed keywords

CONTACT; FABRICATION PROCESS; GATE OXIDE; HOLE ACCUMULATION; HYDROGENATION PROCESS; MAXIMUM DRAIN CURRENT; MAXIMUM TRANSCONDUCTANCE; MOS-FET; MOSFETS; NONDESTRUCTIVE METHODS; PRODUCTION YIELD; SPECIFIC CONTACT RESISTANCES;

DIAMONDS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; HYDROGEN; HYDROGENATION; MOSFET DEVICES; OHMIC CONTACTS; OXYGEN; TEMPERATURE INDICATING CAMERAS; TITANIUM; TITANIUM OXIDES;

TITANIUM CARBIDE;

EID: 77951620433     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2043311     Document Type: Article

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