Doping-induced anisotropic lattice strain in homoepitaxial heavily boron-doped diamond

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1302-1306

  Wojewoda, T ^a   Achatz, P ^a,b   Ortega L ^a   Omnes F ^a   Marcenat, C ^b   Bourgeois, E ^a   Blase, X ^a   Jomard, F ^c   Bustarret, E ^a  

^a CNRS   (France)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

ab initio calculations; Boron doping; Diamond; Strain; X ray Diffraction

Indexed keywords

BORON; DIAMONDS; NONMETALS;

AB INITIO CALCULATIONS; BORON DOPING; DIAMOND; HEAVILY BORON-DOPED; HOMOEPITAXIAL; LATTICE STRAINS; STRAIN; X-RAY DIFFRACTION;

BORON COMPOUNDS;

EID: 49049110923     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.040     Document Type: Article

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