Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2213-2215

  Maruno, S ^a   Fujita, S ^a   Watanabe, H ^a   Kusumi, Y ^a   Ichikawa, M ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003104686     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115862     Document Type: Article

References (9)

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