SCOPUS 정보 검색 플랫폼

Volumn 60, Issue 1, 2011, Pages 46-52

Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems

(10) Nishimura, Tsuyoshi a Nakatsuka, Osamu a Shimura, Yosuke a,b Takeuchi, Shotaro a Vincent, Benjamin c Vantomme, Andre d Dekoster, Johan c Caymax, Matty c Loo, Roger c Zaima, Shigeaki a

a NAGOYA UNIVERSITY (Japan)

b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE (Japan)

c IMEC (Belgium)

d KU LEUVEN (Belgium)

Author keywords

Contact; Germanide; Germanium; Strain; Tin

Indexed keywords

ANISOTROPIC CRYSTALS; ANNEALING TEMPERATURES; CONTACT; CONTACT STRUCTURE; CRYSTALLINE PROPERTIES; GE SYSTEMS; GERMANIDES; INTERFACE ROUGHNESS; POLYCRYSTALLINE; SOLID PHASE REACTION;

AGGLOMERATION; ANISOTROPY; ANNEALING; EPITAXIAL GROWTH; GERMANIUM; NICKEL COMPOUNDS; SURFACE ROUGHNESS;

TIN;

EID: 79955522105 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2011.01.025 Document Type: Article

Times cited : (34)

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