Spin-RAM for normally-off computer

2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011

Volumn , Issue , 2011, Pages 20-25

  Ando, K ^a   Yakushiji, K ^a   Kubota, H ^a   Fukushima, A ^a   Yuasa, S ^a   Kai, T ^b   Kishi, T ^b   Shimomura, N ^b   Aikawa, H ^b   Yoshikawa, M ^b   Nagase, T ^b   Nishiyama, K ^b   Kitagawa, E ^b   Daibou, T ^b   Amano, M ^b   Takahashi, S ^b   Nakayama, M ^b   Ikegawa, S ^b   Nagamine, M ^b   Ozeki, J ^b   Watanabe, D ^b   Yoda, H ^b   Nozaki, T ^c   Suzuki, Y ^c   Oogane, M ^d   Mizukami, S ^d   Ando, Y ^d   Miyazaki, T ^d   Nakatani, Y ^e   more..

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

current induced magnetization reversal; MTJ; perpendicular magnetization; Spin RAM; TMR

Indexed keywords

CURRENT-INDUCED-MAGNETIZATION-REVERSAL; MTJ; PERPENDICULAR MAGNETIZATION; SPIN-RAM; TMR;

MAGNETIC DEVICES; MAGNETIZATION REVERSAL;

RANDOM ACCESS STORAGE;

EID: 84857160169     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMTS.2011.6137104     Document Type: Conference Paper

References (39)

1. K. Ando, "Nonvolatile magnetic memory", J. FED, vol. 12, no.4, pp.89-95, 2001.
2. K. Ando, S. Ikegawa, K. Abe, S. Fujita, and H. Yoda, "Roles of nonvolatile devices in future computer system: normally-off computer", in Sustainable Green Computing: Practices, Methodologies and Technologies, W.-C. Hu and N. Kaabouch, Eds., IGI Global, 2012 in press.
3. T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, S. Takahashi, M. Nakayama, N. Shimomura, H. Aikawa, S. Ikegawa, S. Yuasa, K. Yakushiji, H. Kubota, A. Fukushima, M. Oogane, T. Miyazaki, and K. Ando, "Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM", 2008 IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp.309-312, December 2008.
4. K. Tsuchida, T. Inaba, K. Fujita, Y. Ueda, T. Shimizu, Y. Asao, T. Kajiyama, M. Iwayama, K. Sugiura, S. Ikegawa, T. Kishi, T. Kai, M. Amano, N. Shimomura, H. Yoda, and Y. Watanabe, "A 64Mb MRAM with clamped-reference and adequate-reference schemes", 2010 IEEE International Solid-State Circuits Conference (ISSCC) Technical Digest, pp. 258-260, March 2010.
5. "Nobel Prize in Physics (2007). Albert Fert, Peter Grünberg, Scientific Background", http://nobelprize.org/nobel-prizes/physics/ laureates/2007/phyadv07.pdf.
6. T. Miyazaki and N. Tezuka, "Giant magnetic tunneling effect in Fe/Al2O3/Fe junction", J. Magn. Magn. Mat. vol.139, pp.L231-234, 1995.
7. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, "Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions", Phys. Rev. Lett. vol.74, pp.3273-3276, 1995.
8. M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B.N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N.D. Rizzo, T. Rodriguez, L. Savtchenko, J. Salter, J.M. Slaughter, K. Smith, J.J. Sun, M. Lien, K. Papworth, P. Shah, W. Qin, R. Williams, L. Wise, and S. Tehrani, "A 0.18μm 4Mb toggling MRAM", 2003 IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp.995-997, December 2003.
9. T. Kai, M. Yoshikawa, M. Nakayama, Y. Fukuzumi, T. Nagase, E. Kitagawa, T. Ueda, T. Kishi, S. Ikegawa, Y. Asao, K. Tsuchida, H. Yoda, N. Ishiwata, H. Hada, and S. Tahara, "Improvement of robustness against write disturbance by novel cell design for high density MRAM", 2004 IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp.583-586, 2004. (Pubitemid 40928359)
10. W. J. Gallagher and S. S. P. Parkin, "Development of the magnetic tunnel junction MRAM at IBM: from first junctions to a 16-Mb MRAM demonstrator chip", IBM J. Research and Development, vol.50, no.1, pp.5-23, 2006. (Pubitemid 43257586)
11. W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. Maclaren, "Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches", Phys. Rev. B, vo.63, p.054416, 2001.
12. J. Mathon and A. Umerski, "Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction", Phys. Rev. B, vo.63, p.220403R, 2001.
13. S. Yuasa, A. Fukushima, T. Nagahara, K. Ando, and Y. Suzuki, "High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling", Jpn. J. Appl. Phys., vo.43, pp.L588-L590, 2004.
14. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, "Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions", Nature Mater. vol.3, pp.868-871, 2004.
15. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S. H. Yang, "Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers", Nature Materials, vol.3, pp.862-867, 2004.
16. D. D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, and K. Ando, "230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions", Appl. Phys. Lett., vol.86, p.092502 (2005).
17. S. Yuasa and D. D. Djayaprawira, "Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(001) barrier", J. Phys. D: Appl. Phys., vol.40, pp.R337-R354, 2007. (Pubitemid 350006763)
18. J. C. Slonczewski, "Current-driven excitation of magnetic multilayers", J. Magn. Magn. Mater., vol.159, pp.L1-L7, 1996. (Pubitemid 126356952)
19. L. Berger, "Emission of spin waves by a magnetic multilayer traversed by a current", Phys. Rev. B, vol.54, pp.9353-9358, 1996.
20. E. B. Myers, D. C. Ralph, J. A. Katine, R. N. Louie, and R. A. Buhrman, "Current-induced switching of domains in magnetic multilayer devices", Science, vol.285, pp.867-870, 1999. (Pubitemid 29381982)
21. Y. Huai, F. Albert, P. Nguyen, M. Pakala, and T. Valet, "Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions", Appl. Phys. Lett. vol.84, pp.3118-3120, 2004.
22. H. Kubota, A. Fukushima, Y. Ootani, S. Yuasa, K. Ando, H. Maehara, K. Tsunekawa, D. D. Djayaprawira, N. Watanabe and Y. Suzuki, "Evaluation of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions", Jpn. J. Appl. Phys., vol.44, pp.L1237-L1240, 2005. (Pubitemid 43200683)
23. M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano, "A novel nonvolatile memory with spin torque transfer magnetization switching : Spin-RAM", 2005 IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp.459-462, December 2005. (Pubitemid 46370888)
24. R. Beach, T. Min, C. Horng, Q. Chen, P. Sherman, S. Le, S. Young, K. Yang, H. Yu, X. Lu, W. Kula, T. Zhong, R. Xiao, A. Zhong, G. Liu, J. Kan, J. Yuan, J. Chen, R. Tong, J. Chien, T. Torng, D. Tang, P. Wang, M. Chen, S. Assefa, M. Qazi, J. DeBrosse, M. Gaidis, S. Kanakasabapathy, Y. Lu, J. Nowak, E. O'Sullivan, T. Maffitt, J.Z. Sun, and W.J. Gallagher, "A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)", 2008 IEEE International Electron Devices Meeting (IEDM) Technical Digest, 305-308, December 2008.
25. K. Ono, T. Kawahara, R. Takemura, K. Miura, H. Yamamoto, M. Yamanouchi, J. Hayakawa, K. Ito, H. Takahashi, S. Ikeda, H. Hasegawa, H. Matsuoka, and H. Ohno, "A disturbance-free read scheme and a compact stochastic-spin- dynamics-based MTJ circuit model for Gbscale SPRAM", 2009 IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 9.3.1-9.3.4, December 2009.
26. T. Seki, S. Mitani, K. Yakushiji, and K. Takanashi, "Magnetization reversal by spin-transfer torque in 90° configuration with a perpendicular spin polarizer", Appl. Phys. Lett. vol.89, p.172504, 2006.
27. H. Yoda, T. Kishi, T. Nagase, M. Yoshikawa, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, N. Shimomura, S. Takahashi, T. Kai, M. Nakayama, H. Aikawa, S. Ikegawa, M. Nagamine, J. Ozeki, S. Mizukami, M. Oogane, Y. Ando, S. Yuasa, K. Yakushiji, H. Kubota, Y. Suzuki, Y. Nakatani, T. Miyazaki, and Koji Ando, "High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs", Current Appl. Phys. vol.10, pp.e87-89, 2010.
28. H. Meng and J.-P. Wanga, "Spin transfer in nanomagnetic devices with perpendicular anisotropy", Appl. Phys. Lett., vol.88, p.172506, 2006.
29. S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris and E. E. Fullerton, "Current-inducedmagnetization reversal in nanopillars with perpendicular anisotropy", Nature Materials, vol.5, pp.210-215, 2006. (Pubitemid 43320636)
30. S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan, M. Endo, S. Kanai, J. Hayakawa, F. Matsukura, and H. Ohno, " A perpendicularanisotropy CoFeB-MgO magnetic tunnel junction", Nature Materials, vol.9, pp.721-724, 2010.
31. S. Mizukami, X. Zhang, T. Kubota, H. Naganuma, M. Oogane, Y. Ando, and T. Miyazaki, "Gilbert damping in Ni/Co multilayer films exhibiting large perpendicular anisotropy", Appl. Phys. Express, vol.4, pp.013005-1-3, 2011.
32. M. Nakayama, T. Kai, N. Shimomura, M. Amano, E. Kitagawa, T. Nagase, M. Yoshikawa, T. Kishi, S. Ikegawa, and H. Yoda, "Spin transfer switching in TbCoFe/CoFeB/MgO/CoFeB/TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy", J. Appl. Phys., vol.103, pp.07A710-1-3, 2008.
33. T. Nagase, K. Nishiyama, M. Nakayama, N. Shimomura, M. Amano, T. Kishi, and H. Yoda, "Spin transfer torque switching in perpendicular magnetic tunnel junction with Co based multilaper", presented at American Phys. Soc. March Meeting, New Orleans, 2008.
34. T. Daibou, M.Yoshikawa, E. Kitagawa, T. Nagase, K. Nishiyama, M. Nagamine, M. Amano, M. Nakayama, T. Kai, T. Kishi, and H.Yoda, "Spin transfer torque switching in perpendicular magnetic tunnel junctions using L10-ordered FePd electrodes", presented at The 11th Joint MMM/Intermag Conference, January 2010.
35. M. Yoshikawa, E. Kitagawa, T. Nagase, T. Daibou, M. Nagamine, K. Nishiyama, T. Kishi, and H. Yoda, "Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic L10-FePt electrodes", IEEE Trans. Mag., vol.44, pp.2573-2576, 2008.
36. N. Nishiyama et al., "Large tunnel magnetoresistance of over 200% in MgO-based magnetic tunnel junction with perpendicular magnetic anisotropy", presented at The 11th Joint MMM/Intermag Conference, January 2010.
37. K. Yakushiji, T. Saruya, H. Kubota, A. Fukushima, T. Nagahama, S. Yuasa, and K. Ando, "Ultrathin Co/Pt and Co/Pd superlattice film for MgO-based perpendicular tunnel junction", Appl. Phys. Lett., vol.97, p.232508, 2010.
38. H. Tomita, T. Nozaki, T. Seki, T. Nagase, K. Nishiyama, E. Kitagawa, M. Yoshikawa, T. Daibou, M. Nagamine, T. Kishi, S. Ikegawa, N. Shimomura, H. Yoda, and Y. Suzuki, "High-speed spin-transfer switching in GMR nano-pillars with perpendicular anisotropy", IEEE Tran. Mag., vol.47, pp.1599-1602, 2011.
39. Y. Shiota, T. Nozaki, F. Bonell, S. Murakami, T. Shinjo, and Y. Suzuki, "Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses", Nature Materials, published online 13 November 2011.