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Volumn 43, Issue 4 B, 2004, Pages
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High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling
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Author keywords
Epitaxial growth; Magnetic tunnel junction; MRAM; TMR effect; Tunnel magnetoresistance
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Indexed keywords
CRYSTALLINE MATERIALS;
ELECTRODES;
MAGNETORESISTANCE;
POLARIZATION;
RANDOM ACCESS STORAGE;
THERMAL EFFECTS;
TUNNEL JUNCTIONS;
MAGNETIC TUNNEL JUNCTIONS (MTJ);
MAGNETORESISTANCE RANDOM-ACCESS-MEMORY (MRAM);
SPIN-POLARIZED TUNNELING;
TMR EFFECTS;
TUNNEL MAGNETORESISTANCE;
IRON;
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EID: 3042718031
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.43.l588 Document Type: Article |
Times cited : (257)
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References (14)
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