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Volumn 43, Issue 4 B, 2004, Pages

High tunnel magnetoresistance at room temperature in fully epitaxial Fe/MgO/Fe tunnel junctions due to coherent spin-polarized tunneling

Author keywords

Epitaxial growth; Magnetic tunnel junction; MRAM; TMR effect; Tunnel magnetoresistance

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRODES; MAGNETORESISTANCE; POLARIZATION; RANDOM ACCESS STORAGE; THERMAL EFFECTS; TUNNEL JUNCTIONS;

EID: 3042718031     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l588     Document Type: Article
Times cited : (257)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.