A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Beach, R ^a   Min, T ^a   Horng, C ^a   Chen, Q ^a   Sherman, P ^a   Le, S ^a   Young, S ^a   Yang, K ^a   Yu, H ^a   Lu, X ^a   Kula, W ^a   Zhong, T ^a   Xiao, R ^a   Zhong, A ^a   Liu, G ^a   Kan, J ^a   Yuan, J ^a   Chen, J ^a   Tong, R ^a   Chien, J ^a   Torng, T ^a   Tang, D ^a   Wang, P ^a   Chen, M ^a   Assefa, S ^b   Qazif, M ^a   Debrosse, J ^a   Gaidis, M ^b   Kanakasabapathy, S ^b   Lu, Y ^b   Nowak, J ^b   O'Sullivan, E ^b   Maffitt, T ^a   Sun, J Z ^b   Gallagher, W J ^b   more..

^a IBM   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DENSITIES; MAGNETIC REVERSALS; MAGNETIC TUNNEL JUNCTIONS; RESISTANCE-AREA PRODUCTS; SPIN TORQUE TRANSFERS; STATISTICAL STUDIES; TUNNELING MAGNETORESISTANCES; VOLTAGE MARGINS;

ELECTRIC RESISTANCE; ELECTRON DEVICES; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 64549136617     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796679     Document Type: Conference Paper

References (5)

1. M. Hosomi et al., IEDM Tech. Digest, pp. 459-462, 2005.
2. http://www.freescale.com/files/memory/doc/fact-sheet/BRMRAMSLSCLTRL.pdf
3. T. Min, et al., "Back-hopping after Spin Torque Transfer Induced Magnetization Switching in Magnetic Tunneling Junction Cells", Dig. Of MMM 2008, DB-02, Oct, 2008
4. Q. Chen et al., "Study of Dielectric Breakdown Distributions in Magnetic Tunneling Junction with MgO Barrier" Dig. Of MMM2008, AD-12, Oct, 2008
5. J. DeBrosse et al., Symp. VLSI Circuits, pp. 454-457 (2004).