Stress metrology: The challenge for the next generation of engineered wafers

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 97-102

  Tiberj, Antoine ^a   Paillard, Vincent ^b   Aulnette, Cécile ^a   Daval, Nicolas ^a   Bourdelle, Konstantin K ^a   Moreau, Myriam ^c   Kennard, Mark ^a   Cayrefourcq, Ian ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c HORIBA Jobin Yvon SAS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; NEAR FIELD SCANNING OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SILICON COMPOUNDS; STRESS CONCENTRATION; STRESSES;

ELECTRICAL PARAMETERS; MICROSCOPIC STRAIN MODULATION; SPECTROSCOPIC ELLIPSOMETRY (SE); STRESS METROLOGY;

SILICON WAFERS;

EID: 10244231578     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b3.1     Document Type: Conference Paper

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