Raman spectroscopy study of damage and strain in (001) and (011) Si induced by hydrogen or helium implantation

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Villeneuve, C ^a,b   Bourdelle, K K ^a   Paillard, V ^b   Hebras, X ^a   Kennard, M ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM; HYDROGEN; ION IMPLANTATION; RAMAN SPECTROSCOPY;

CRYSTALLOGRAPHIC ORIENTATION; LATTICE DISORDER; NANOBUBBLES; SPATIAL CORRELATION MODEL;

SILICON;

EID: 37549035072     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2809394     Document Type: Article

References (27)

1. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 0021-8979 10.1063/1.1558223 93, 4955 (2003).
2. M. Bruel, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(95)01056-4 108, 313 (1996).
3. V. Raineri, S. Coffa, S. Szilagyi, J. Gyulai, and E. Rimini, Phys. Rev. B 0163-1829 10.1103/PhysRevB.61.937 61, 937 (2000).
4. G. F. Cerofolini, F. Corni, S. Frabboni, C. Nobili, G. Ottaviani, and R. Tonini, Mater. Sci. Eng. 0025-5416 10.1016/S0927-796X(00)00007-3 27, 1 (2000).
5. R. Siegele, G. C. Weatherly, H. K. Haugen, D. J. Lockwood, and L. M. Howe, Appl. Phys. Lett. 0003-6951 10.1063/1.113228 66, 1319 (1995).
6. S. M. Myers, G. A. Peterson, and C. H. Seager, J. Appl. Phys. 0021-8979 10.1063/1.363322 80, 3717 (1996).
7. K. L. Saenger, J. P. de Souza, K. E. Fogel, J. A. Ott, A. Reznicek, C. Y. Sung, D. K. Sadana, and H. Yin, Appl. Phys. Lett. 0003-6951 10.1063/1.2138795 87, 221911 (2005).
8. K. K. Bourdelle, O. Rayssac, A. Lambert, F. Fournel, X. Hebras, F. Allibert, C. Figuet, A. Boussagol, C. Berne, K. Tsyganenko, F. Letertre, and C. Mazuŕ, ECS Trans. 10.1149/1.2356161 3, 409 (2006).
9. K. K. Bourdelle, T. Akatsu, N. Sousbie, F. Letertre, D. Delprat, E. Neyret, N. Ben Mohamed, G. Suciu, C. Lagahe-Blanchard, A. Beaumont, A. -M. Charvet, A. -M. Papon, N. Kernevez, C. Maleville, and C. Mazuŕ, in 2004 IEEE International SOI Conference Proceedings (2004), p. 98.
10. B. Terreault, Phys. Status Solidi A 204, 2121 (2007)
11. C. Villeneuve, V. Paillard, K. K. Bourdelle, I. Cayrefourcq, A. Boussagol, and M. Kennard, Nucl. Instrum. Methods Phys. Res. B. 253, 182 (2006).
12. G. Hobler, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(94)00476-5 96, 155 (1995).
13. T. Höchbauer, A. Misra, M. Nastasi, and J. W. Mayer, J. Appl. Phys. 0021-8979 10.1063/1.1494844 92, 2335 (2002).
14. N. Sousbie, L. Capello, J. Eymery, F. Rieutord, and C. Lagahe, J. Appl. Phys. 0021-8979 10.1063/1.2198928 99, 103509 (2006).
15. P. Y. Yu and M. Cardona, Fundamentals of Semiconductor, 2nd ed. (Springer, Berlin, 1999), p. 367.
16. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. 0038-1098 10.1016/0038-1098(81)90337-9 39, 625 (1981).
17. P. Parayanthal and F. H. Pollack, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.52.1822 52, 1822 (1984).
18. J. Macia, E. Martin, A. Perez-Rodriguez, J. Jimenez, J. M. Morante, B. Aspar, and J. Margial, J. Appl. Phys. 0021-8979 10.1063/1.365735 82, 3730 (1997); X. Huang, F. Ninio, L. J. Brown, and S. Prawer, J. Appl. Phys. 0021-8979 10.1063/1.359171 77, 5910 (1995).
19. J. Macia, E. Martin, A. Perez-Rodriguez, J. Jimenez, J. M. Morante, B. Aspar, and J. Margial, J. Appl. Phys. 0021-8979 10.1063/1.365735 82, 3730 (1997); X. Huang, F. Ninio, L. J. Brown, and S. Prawer, J. Appl. Phys. 0021-8979 10.1063/1.359171 77, 5910 (1995).
20. V. Paillard, P. Puech, M. A. Laguna, R. Carles, B. Kohn, and F. Huisken, J. Appl. Phys. 0021-8979 10.1063/1.370988 86, 1921 (1999).
21. W. Weber, Phys. Rev. B 15, 4789 (1977).
22. G. Hobler, K. K. Bourdelle, and T. Akatsu, Nucl. Instrum. Methods Phys. Res. B 242, 623 (2006). 0168-583X
23. G. Hobler and G. Otto, Mater. Sci. Semicond. Process. 1369-8001 10.1016/S1369-8001(03)00065-9 6, 1 (2003).
24. E. P. EerNisse, Appl. Phys. Lett. 0003-6951 10.1063/1.1653549 18, 581 (1971).
25. F. Cerdeira, C. J. Buchenauer, F. H. Pollak, and M. Cardona, Phys. Rev. B 5, 580 (1972).
26. X. Hebras, P. Nguyen, K. K. Bourdelle, F. Letertre, N. Cherkashin, and A. Claverie, Nucl. Instrum. Methods Phys. Res. B 262, 24 (2007). 0168-583X
27. M. Zheng, S. S. Lau, T. Höchbauer, A. Misra, X. -M. He, M. Nastasi, and J. W. Mayer, J. Appl. Phys. 0021-8979 10.1063/1.1334921 89, 2972 (2001).