Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section

Applied Physics Letters

Volumn 91, Issue 24, 2007, Pages

  Poborchii, Vladimir ^a   Tada, Tetsuya ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL MICROSCOPY; CRYSTAL STRUCTURE; PHONONS; RAMAN SCATTERING; STRESS ANALYSIS; ULTRAVIOLET RADIATION;

EXCITATION CONFOCAL RAMAN MICROSCOPY; OPTICAL PHONONS; POLARIZED RAMAN SPECTRA; SI STRIPES;

SILICON;

EID: 37149056900     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2825286     Document Type: Article

References (8)

1. V. Poborchii, T. Tada, and T. Kanayama, Appl. Phys. Lett. 89, 233505 (2006).
2. E. Bonera, M. Fanciulli, and M. Mariani, Appl. Phys. Lett. 87, 111913 (2005).
3. E. Anastassakis, A. Cantarero, and M. Cardona, Phys. Rev. B 41, 7529 (1990).
4. E. Anastassakis, A. Pinczuk, E. Burstein, F. H. Pollak, and M. Cardona, Solid State Commun. 8, 133 (1969).
5. F. Cerdeira, C. J. Buchenauer, F. H. Pollak, and M. Cardona, Phys. Rev. B 5, 580 (1972).
6. I. De Wolf, H. E. Maes, and S. K. Jones, J. Appl. Phys. 0021-8979 10.1063/1.361485 79, 7148 (1996); I. De Wolf and E. Anastassakis, J. Appl. Phys. 85, 7484 (1999).
7. I. De Wolf, H. E. Maes, and S. K. Jones, J. Appl. Phys. 0021-8979 10.1063/1.361485 79, 7148 (1996); I. De Wolf and E. Anastassakis, J. Appl. Phys. 85, 7484 (1999).
8. E. Bonera, M. Fanciuli, and G. Carnevale, J. Appl. Phys. 100, 033516 (2006).