Optical mapping of aluminum doped p-type SiC wafers

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 598-601

  Wellmann, P J ^a   Straubinger, T ^a   Kunecke U ^a   Muller R ^a   Sakwe, S A ^a   Pons, M ^b   Thuaire, A ^c   Crisci, A ^c   Mermoux, M ^c   Auvray, L ^b,d   Camassel, J ^e  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b Grenoble INP Phelma   (France)

^c LEPMI   (France)

^d SAVOIE TECHNOLAC   (France)

^e UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE MAPPING; CHARGE CARRIER CONCENTRATION; OPTICAL TECHNIQUES;

ABSORPTION; ALUMINUM; BIREFRINGENCE; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY;

SILICON CARBIDE;

EID: 25444528458     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460436     Document Type: Conference Paper

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