Sputter deposition of semicrystalline tin dioxide films

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2554-2561

  Tosun, B Selin ^a   Feist, Rebekah K ^b   Gunawan, Aloysius ^a   Mkhoyan, K Andre ^a   Campbell, Stephen A ^a   Aydil, Eray S ^a  

^a University of Minnesota   (United States)

^b DOW CHEMICAL COMPANY   (United States)

Author keywords

Amorphous; Electrical properties; Semicrystalline; Sputtering; Tin dioxide; X ray diffraction

Indexed keywords

AMORPHOUS MATRICES; COPPER INDIUM GALLIUM DISELENIDE; CRYSTALLINITIES; DEPOSITION TEMPERATURES; DEPOSITION TIME; DEVICE RELIABILITY; DIFFRACTION PEAKS; FEED GAS; FEED GAS COMPOSITION; FILM CRYSTALLINITY; FILM PROPERTIES; HALL EFFECT MEASUREMENT; INITIAL DEPOSITIONS; NANOMETER SIZE; OXYGEN ADDITION; OXYGEN CONCENTRATIONS; POLYCRYSTALLINE; POLYCRYSTALLINE FILM; POWDER DIFFRACTION; ROOM TEMPERATURE; SEMICRYSTALLINE; SEMICRYSTALLINES; SODA LIME GLASS; SPUTTERING GAS; SPUTTERING POWER; SURFACE NORMALS; TIN DIOXIDE FILM; WATER PERMEATION; WIDE BAND GAP; WINDOW LAYER; XRD;

AMORPHOUS MATERIALS; ARGON; CARRIER CONCENTRATION; DEPOSITION; DEPOSITION RATES; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GLASS; LIME; OXYGEN; SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPUTTERING; TIN; TIN DIOXIDE; TINNING; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 84856391175     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.169     Document Type: Article

References (27)

1. M.A. Gubbins, V. Casey, and S.B. Newcomb Thin Solid Films 405 2002 270
2. A. Martel, F. Caballero-Briones, P. Bartolo-Perez, A. Iribarren, R. Castro-Rodrigues, A. Zapata-Navarro, and J.L. Pena Surf. Coat.Technol. 148 2001 103
3. T.W. Kim Mater. Res. Bull 36 2001 349
4. T.W. Kim, D.U. Lee, M. Jung, J.H. Lee, D.C. Choo, J.W. Cho, K.Y. Seo, and Y.S. Yoon Appl. Surf. Sci. 182 2001 69
5. W.C. Chang, S. Lee, and X. Qi J. Electrochem. Soc. 157 2010 J245
6. S. Jager, B. Szyszka, J. Szczyrbowski, and G. Brauer Surf. Coat.Technol. 98 1998 1304
7. S.U. Lee, B. Hong, and W.S. Choi J. Vac. Sci. Technol. A 27 2009 996
8. J. Montero, J. Herrero, and C. Guillen Sol. Energy Mater. Sol. Cells 94 2010 612
9. V. Senthilkumar, P. Vickraman, J.J. Prince, M. Jayachandran, and C. Sanjeeviraja Phil. Mag. Lett. 90 2010 337
10. C. Korber, P. Agoston, and A. Klein Sensor Actuat. B-Chem. 139 2009 665
11. T. Diana, K.N. Devi, and H.N. Sarma Indian J. Phys. 84 2010 687
12. T.P. Niesen, and M.R. De Guire Solid State Ionics 151 2002 61
13. S.G. Ansari, M.A. Dar, M.S. Dhage, Y.S. Kim, Z.A. Ansari, A. Al-Hajry, and H. Shin Rev. Sci. Intrum. 80 2009 0451121
14. T. Serin, N. Serin, S. Karadeniz, H. Sari, N. Tugluoglu, and O. Pakma J. Non-Cryst. Solids 352 2006 209
15. X.Q. Pan, and L. Fu J. Appl. Phys. 89 2001 6048
16. M. Alaf, M.O. Guler, D. Gultekin, M. Uysal, A. Alp, and H. Akbulut Vacuum 83 2009 292
17. S.S. Pan, G.H. Li, L.B. Wang, Y.D. Shen, Y. Wang, T. Mei, and X. Hu Appl. Phys. Lett. 95 2009 222112
18. C. Korber, J. Suffner, and A. Klein J. Phys. D: Appl. Phys. 43 2010 055301
19. H.L. Ma, X.T. Hao, J. Ma, Y.G. Yang, J. Huang, D.H. Zhang, and X.G. Xu Appl. Surf. Sci. 191 2002 313
20. M.J. Behr, K.A. Mkhoyan, and E.S. Aydil ACS Nano 4 2010 5087
21. C. Drake, and S. Seal Appl. Phys. Lett. 90 2007 233117
22. J.C. Manifacier, M. De Murcia, and J.P. Pillard Thin Solid Films 41 1977 127
23. J. Bruneaux, H. Cachet, M. Froment, and A. Messad Thin Solid Films 197 1991 129
24. S. Shirakata, A. Yokoyama, and S. Isomura Jpn. J. Appl. Phys. 2 35 1996 L722
25. R.Y. Korotkov, A.J.E. Farran, T. Culp, D. Russo, and C. Roger J. Appl. Phys. 96 2004 6445
26. A. Oprea, E. Moretton, N. Barsan, W.J. Becker, J. Wollenstein, and U. Weimar J. Appl. Phys. 100 2006 033716
27. B.S. Sang, Y. Nagoya, K. Kushiya, and O. Yamase Sol. Energy Mater. Sol. Cells 75 2003 179