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Volumn 36, Issue 1-2, 2001, Pages 349-353
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Dependence of the structural, the electrical, and the optical properties on the Ar/O2 flow rate ratios for SnO2 thin films grown on p-InSb (111) substrates
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Author keywords
A. Semiconductors; C. X ray diffraction; D. Luminescence
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Indexed keywords
ARGON;
ATOMIC FORCE MICROSCOPY;
CARRIER CONCENTRATION;
EPITAXIAL GROWTH;
FILM GROWTH;
IMAGE ANALYSIS;
MAGNETRON SPUTTERING;
MORPHOLOGY;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING TIN COMPOUNDS;
SEMICONDUCTOR DOPING;
SUBSTRATES;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
RADIO-FREQUENCY MAGNETRON SPUTTERING;
SEMICONDUCTING FILMS;
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EID: 0035051370
PISSN: 00255408
EISSN: None
Source Type: Journal
DOI: 10.1016/S0025-5408(01)00500-1 Document Type: Article |
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Times cited : (7)
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References (14)
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