Dependence of the structural, the electrical, and the optical properties on the Ar/O 2 flow-rate ratios for SnO 2 thin films grown on p-InP (1 0 0) substrates at low temperature

Applied Surface Science

Volumn 182, Issue 1-2, 2001, Pages 69-76

  Kim, T W ^a   Lee, D U ^a   Jung, M ^a   Lee, J H ^a   Choo, D C ^a   Cho, J W ^a   Seo, K Y ^a   Yoon, Y S ^b  

^a Kwangwoon University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; MAGNETRON SPUTTERING; OXYGEN; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING TIN COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

DONOR-ACCEPTOR PAIR TRANSITIONS;

THIN FILMS;

EID: 0035813570     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00437-8     Document Type: Article

References (19)