Effects of annealing temperature on structural, optical, and electrical properties of antimony-doped tin oxide thin films

Philosophical Magazine Letters

Volumn 90, Issue 5, 2010, Pages 337-347

  Senthilkumar, V ^a   Vickraman, P ^a   Prince, J Joseph ^b   Jayachandran, M ^c   Sanjeeviraja, C ^d  

^a GANDHIGRAM RURAL UNIVERSITY   (India)

^b ANNA UNIVERSITY   (India)

^c CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^d ALAGAPPA UNIVERSITY   (India)

Author keywords

Annealing process; Atomic force microscopy; Optical properties; Photoluminescence; X ray diffraction

Indexed keywords

ABSORPTION COEFFICIENTS; ANNEALED FILMS; ANNEALING PROCESS; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; ANTIMONY-DOPED TIN OXIDE; CELL VOLUME; DISLOCATION DENSITIES; ELECTRICAL PROPERTY; ELECTRON BEAM EVAPORATION; EXTINCTION COEFFICIENTS; GLASS SUBSTRATES; GRAIN SIZE; NIR REGIONS; OPTICAL ENERGY BAND GAP; PHOTOLUMINESCENCE SPECTRUM; PHOTON ENERGY; POLYCRYSTALLINE; SHORT WAVELENGTHS; TETRAGONAL STRUCTURE; UV-VISIBLE; VISIBLE REGION; XRD ANALYSIS; XRD PATTERNS;

AMORPHOUS FILMS; ANNEALING; ANTIMONY; ATOMIC FORCE MICROSCOPY; ATOMS; ELECTRIC PROPERTIES; ELECTRON BEAMS; OPTICAL CONSTANTS; OXIDE FILMS; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION;

OPTICAL FILMS;

EID: 77951471324     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/09500831003662529     Document Type: Article

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