Submicron ambipolar nanocrystalline silicon thin-film transistors and inverters

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 359-366

  Subramaniam, Anand ^a   Cantley, Kurtis D ^a   Stiegler, Harvey J ^a   Chapman, Richard A ^a   Vogel, Eric M ^a,b  

^a The University of Texas at Dallas   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

Amplifier; frequency response; inverter; nanocrystalline silicon (nc Si); nanowires; SPICE; thin film transistor (TFT)

Indexed keywords

AMBIPOLAR; AMBIPOLAR BEHAVIOR; AMPLIFIER CIRCUITS; CHANNEL LAYERS; CROWBAR CURRENT; DRAIN VOLTAGE; FABRICATED DEVICE; FIELD-EFFECT MOBILITIES; FREQUENCY RANGES; GATE LENGTH; HIGH VOLTAGE GAIN; HIGH-DENSITY; INVERTER; LOW THRESHOLD VOLTAGE; MEASURED DATA; NANOCRYSTALLINES; NANOSCALE DIMENSIONS; ON-OFF RATIO; OPTIMIZED GEOMETRIES; OXYGEN CONTENT; PROCESSING TEMPERATURE; SHORT-CHANNEL EFFECT; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS; SPICE SIMULATIONS; SUBMICRON;

AMORPHOUS SILICON; AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; COMPUTER SOFTWARE; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; FREQUENCY RESPONSE; LEAKAGE CURRENTS; NANOCRYSTALLINE SILICON; NANOWIRES; PROCESSING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

SPICE;

EID: 84856305757     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2176737     Document Type: Article

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