SOI-MOSFET threshold-voltage characteristics

Russian Microelectronics

Volumn 32, Issue 1, 2003, Pages 1-10

  Zakharov, S M ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY VALUE PROBLEMS; CARRIER CONCENTRATION; ELECTRIC SPACE CHARGE; GATES (TRANSISTOR); MICROELECTRONICS; MOSFET DEVICES; POISSON EQUATION; THRESHOLD VOLTAGE;

CHARGE COUPLINGS; EXPONENTIAL GROWTH; RADIATION HARDNESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 3543082275     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021803601001     Document Type: Article

References (7)

1. Colinge, J.-P., Silicon-on-Insulator Technology: Materials to VLSI, Boston: Kluwer Academic, 1997.
2. Lim, H.-K. and Fossum, J.G., Threshold Voltage of Thin-Film Silicon-on-Insulator (SOI) MOSFET's, IEEE Trans. Electron Devices, 1983, vol. 30, no. 10, pp. 1244-1251.
3. Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981, 2nd ed. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984.
4. Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981, 2nd ed. Translated under the title Fizika poluprovodnikovykh priborov, Moscow: Mir, 1984.
5. Muller, R.S. and Kamins, T.I., Device Electronics for Integrated Circuits, New York: Wiley, 1986, 2nd ed. Translated under the title Elementy integral'nykh skhem, Moscow: Mir, 1989.
6. Muller, R.S. and Kamins, T.I., Device Electronics for Integrated Circuits, New York: Wiley, 1986, 2nd ed. Translated under the title Elementy integral'nykh skhem, Moscow: Mir, 1989.
7. Wei, A., Sherony, M.J., and Antoniadis, D.A., Effect of Floating-Body Charge on SOI MOSFET Design, IEEE Trans. Electron Devices, 1998, vol. 45, no. 2, pp. 430-438.