Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

  Cantley, Kurtis D ^a   Subramaniam, Anand ^a   Pratiwadi, Ramapriyan R ^a   Floresca, Herman Carlo ^a   Wang, Jinguo ^a   Stiegler, Harvey ^a   Chapman, Richard A ^a   Kim, Moon J ^a   Vogel, Eric M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CHANNEL WIDTHS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; HYDROGENATED AMORPHOUS SILICON; MAXIMUM TEMPERATURE; ON-CURRENTS; SCHOTTKY BARRIERS; SCHOTTKY SOURCE/DRAIN; SOURCE/DRAIN JUNCTIONS; SUBTHRESHOLD SLOPE;

ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; HYDROGENATION; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS SILICON;

EID: 77958057525     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3499288     Document Type: Article

References (23)

1. M. J. Powell, C. v. Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, Phys. Rev. B PLRBAQ 0556-2805 45, 4160 (1992). 10.1103/PhysRevB.45.4160
2. M. J. Powell, IEEE Trans. Electron Devices IETDAI 0018-9383 36, 2753 (1989). 10.1109/16.40933 (Pubitemid 20653408)
3. R. A. Street, Technology and Applications of Amorphous Silicon (Springer, New York, 2000).
4. C. Mead, Proc. IEEE IEEPAD 0018-9219 78, 1629 (1990). 10.1109/5.58356
5. K. D. Cantley, A. Subramaniam, H. J. Stiegler, R. A. Chapman, and E. M. Vogel, Proceedings of the IEEE International Midwest Symposium on Circuits and Systems, Seattle, WA, 2010.
6. C. Diorio, P. Hasler, A. Minch, and C. A. Mead, IEEE Trans. Electron Devices IETDAI 0018-9383 43, 1972 (1996). 10.1109/16.543035
7. Y. Kuo and H. Nominanda, Appl. Phys. Lett. APPLAB 0003-6951 89, 173503 (2006). 10.1063/1.2356313 (Pubitemid 44656739)
8. C. Koch, Biophysics of Computation (Oxford University Press, New York, 1999).
9. J. -H. Lee, W. -J. Nam, K. -S. Shin, and M. -K. Han, J. Non-Cryst. Solids JNCSBJ 0022-3093 352, 1719 (2006). 10.1016/j.jnoncrysol.2005.11.143 (Pubitemid 43816541)
10. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. (Wiley, Hoboken, NJ, 2007).
11. M. J. Powell and J. W. Orton, Appl. Phys. Lett. APPLAB 0003-6951 45, 171 (1984). 10.1063/1.95158 (Pubitemid 14606214)
12. D. R. Allee, L. T. Clark, B. D. Vogt, R. Shringarpure, S. M. Venugopal, S. G. Uppili, K. Kaftanoglu, H. Shivalingaiah, Z. P. Li, J. J. Ravindra Fernando, E. J. Bawolek, and S. M. O'Rourke, IEEE Trans. Electron Devices IETDAI 0018-9383 56, 1166 (2009).
13. J. S. Kang, D. K. Schroder, and A. R. Alvarez, Solid-State Electron. SSELA5 0038-1101 32, 679 (1989). 10.1016/0038-1101(89)90149-4
14. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, J. Appl. Phys. JAPIAU 0021-8979 69, 2339 (1991). 10.1063/1.348716
15. B. Cabon-Till, G. Ghibaudo, and S. Cristoloveanu, Electron. Lett. ELLEAK 0013-5194 21, 457 (1985).
16. H. -W. Zan, T. -C. Chang, P. -S. Shih, D. -Z. Peng, T. -Y. Huang, and C. -Y. Chang, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 42, 28 (2003). 10.1143/JJAP.42.28
17. N. Yamauchi, J. -J. J. Hajjar, and R. Reif, IEEE Trans. Electron Devices IETDAI 0018-9383 38, 55 (1991). 10.1109/16.65736
18. D. N. Yaung, Y. K. Fang, K. C. Hwang, K. Y. Lee, K. H. Wu, J. J. Ho, C. Y. Chen, Y. J. Wang, M. S. Liang, J. Y. Lee, and S. G. Wuu, IEEE Electron Device Lett. EDLEDZ 0741-3106 19, 429 (1998). 10.1109/55.728902
19. S. J. Kang, M. Noh, D. S. Park, H. J. Kim, S. Y. Kim, B. W. Koo, I. N. Kang, and C. N. Whang, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 43, 7718 (2004). 10.1143/JJAP.43.7718 (Pubitemid 40049911)
20. A. T. Hatzopoulos, N. Arpatzanis, D. H. Tassis, C. A. Dimitriadis, F. Templier, M. Oudwan, and G. Kamarinos, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 1265 (2007). 10.1109/TED.2007.894597 (Pubitemid 46695358)
21. S. -M. Koo, M. D. Edelstein, Q. Li, C. A. Richter, and E. M. Vogel, Nanotechnology NNOTER 0957-4484 16, 1482 (2005). 10.1088/0957-4484/16/9/011 (Pubitemid 41107798)
22. S. -M. Koo, A. Fujiwara, J. -P. Han, E. M. Vogel, C. A. Richter, and J. E. Bonevich, Nano Lett. NALEFD 1530-6984 4, 2197 (2004). 10.1021/nl0486517
23. S. -M. Koo, Q. Li, M. D. Edelstein, C. A. Richter, and E. M. Vogel, Nano Lett. NALEFD 1530-6984 5, 2519 (2005). 10.1021/nl051855i (Pubitemid 43088905)