Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 99-100

  Subramaniam, Anand ^a   Cantley, Kurtis D ^a   Chapman, Richard A ^a   Chakrabarti, Bhaswar ^a   Vogel, Eric M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS STRUCTURES; LOW TEMPERATURES; NEUROMORPHIC CIRCUITS; OXYGEN IMPURITY; SUBMICRON DIMENSION; THIN-FILM TRANSISTOR (TFTS); THREE DIMENSIONAL INTEGRATION; THRESHOLD VOLTAGE SHIFTS;

CRYSTALLINE MATERIALS; THRESHOLD VOLTAGE;

SILICON;

EID: 84856276360     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994433     Document Type: Conference Paper

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