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Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

Probing residual strain in epitaxial graphene layers on 4H-SiC (000 1-) with Raman spectroscopy

(4) Strudwick, A J a Creeth, G L a Johansson, N A B a Marrows, C H a

a UNIVERSITY OF LEEDS (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; BONDING MECHANISM; COMPRESSIVE STRAIN; DIFFERENTIAL THERMAL CONTRACTION; EPITAXIAL GRAPHENE; RAMAN MICROSPECTROSCOPY; RESIDUAL STRAINS;

EPITAXIAL GROWTH; GRAPHENE; GROWTH TEMPERATURE; RAMAN SPECTROSCOPY; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951475773 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3551625 Document Type: Article

Times cited : (20)

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