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Volumn 8, Issue 10, 2011, Pages 1993-1998

Ballistic conductance model of bilayer graphene nanoribbon (BGN)

Author keywords

Ballistic Conductance; Bilayer Graphene Nanoribbon (BGN); Degenerate; Electronic Properties; Non Degenerate

Indexed keywords

ANALYTICAL MODEL; BALLISTIC CONDUCTANCE; BI-LAYER; DEGENERATE; EXPERIMENTAL DATA; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; NEUTRALITY POINT; NON-DEGENERATE; NUMERICAL SOLUTION; TEMPERATURE DEPENDENCE;

EID: 84855779672     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2011.1915     Document Type: Article
Times cited : (22)

References (39)
  • 5
    • 57849169371 scopus 로고    scopus 로고
    • On the modeling of resistance in graphene nanoribbon (GNR) for future interconnect applications Computer-Aided Design 2008
    • San Jose, CA, USA
    • T. Ragheb and Y. Massoud, On the modeling of resistance in graphene nanoribbon (GNR) for future interconnect applications, Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on 2008, San Jose, CA, USA.
    • ICCAD 2008. IEEE/ACM International Conference on 2008
    • Ragheb, T.1    Massoud, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.