Performance analysis of graphene bilayer transistors through tight-binding simulations

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Volumn , Issue , 2009, Pages

  Fiori, Gianluca ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BI-LAYER; CMOS DEVICES; DINGER EQUATION; GRAPHENES; NUMERICAL SOLVERS; PERFORMANCE ANALYSIS; SELF-CONSISTENT SOLUTION; SIMULATION STUDIES; TIGHT BINDING; VERTICAL FIELDS;

ELECTRONICS ENGINEERING; GRAPHITE;

IONIC CONDUCTION;

EID: 70350241404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091138     Document Type: Conference Paper

References (23)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science, Vol. 306, No. 5696, p. 666 2004.
2. C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, W. A. de Heer, Science, Vol. 312, p. 1191, 2006.
3. International Technology Roadmap for Semiconductors 2007, Semi-conductor Industry Association, S. Jose, USA, (http://public.itrs.net).
4. J.H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, Nature Nanotechnology, Vol. 3, p. 206, 2008.
5. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, IEEE Electr. Dev. Lett., Vol. 28, No. 4, p. 282, 2007.
6. Z.Chen, Y-M. Lin, M. J. Rooks and P. Avouris, Physica E, Volume 40, p. 228, 2007.
7. Y-W Son, M.L. Cohen, S.G. Louie, Phys. Rev. Lett. Vol. 97, p. 216803, 2006.
8. M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, Phys Rev Lett. Vol. 98, p. 206805, 2007.
9. L. Tapaszto, G. Dobrik, P. Lambin, and L. P. Biro, Nature Nanotechnology, 3, 397 (2008).
10. L. Weng, L. Zhang, Yong P. Chen, and L. P. Rokhinson, Appl. Phys. Lett 93, 093107 (2008).
11. X. Li, X. Wang, L. Zhang, S. Lee, H. Dai, Science, Vol. 319, pp. 1229-1232, 2008.
12. X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, H. Dai, Phys Rev Lett, Vol. 100, p. 206803, 2008.
13. E. McCann, V.I. Falko, Phys. Rev. Lett., Vol. 96, p. 086805, 2006.
14. J. Nilsson, A.H. Castro Neto, F. Guinea, N.M.R. Peres, Phys. Rev. Lett., Vol. 97, p. 266801, 2006.
15. E.V. Castro, K.S. Novoselov, S.V. Morozov, N.M.R. Peres, J.M.B Lopes dos Santos, J. Nilsson, F. Guinea, A.K. Geim, A.H. Castro Neto, Phys. Rev. Lett., Vol. 99, p. 216802, 2007.
16. T. Ohta, A. Bostwick, T. Seyller, K. Horn, E. Rotenberg, Science, Vol. 313, pp. 951-954, 2006.
17. J.B. Oostinga, H.B. Heersche, X. Liu, A.F. Morpurgo, Nature Material, Vol. 7, pp.151-157, 2008.
18. Y. Ouyang, P. Campbell, J. Guo, Appl. Phys. Lett., Vol. 92, p. 063120, 2008.
19. G. Fiori, G. Iannaccone, IEEE Electr. Dev. Lett., Vol.30, p.261, 2009.
20. M.Cheli, G.Fiori, G.Iannaccone, available online at http://arxiv.org/abs/ 0812.4739
21. See the website for the source code and the documentation. [Online]. Available: http://www.nanohub.org/tools/vides.
22. S. Datta. Superlattice and Microstructures, Vol. 28, pp. 253-277, Jul. 2000.
23. M. P. Lopez Sancho, J. M. Lopez Sancho, and J. Rubio, J. Phys. F., Vol. 15, pp. 851-858, Oct. 1984.