Analytical modeling of current in graphene nanoribbon field effect transistors

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Volumn , Issue , 2009, Pages 710-712

  Kargar, Alireza ^a  

^a SHIRAZ UNIVERSITY   (Iran)

Author keywords

Analytical modeling; Field efect transistor; Graphene nanoribbon

Indexed keywords

ANALYTICAL FORMULAS; ANALYTICAL INVESTIGATIONS; ANALYTICAL MODELING; BALLISTIC TRANSPORTS; CHANNEL CURRENTS; DEVICE PARAMETERS; DOUBLE GATE; ELECTRICAL PARAMETER; EXPONENTIAL EQUATIONS; GRAPHENE NANO-RIBBON; LANDAUER FORMULA; NANOELECTRONIC APPLICATIONS; POTENTIAL DISTRIBUTIONS; TRANSMISSION PROBABILITIES;

BALLISTICS; DRAIN CURRENT; ELECTRON MULTIPLIERS; GRAPHENE; GRAPHITE; MESFET DEVICES; NANOTECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 77950978727     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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