Investigation of excess 1/f noise in CdTe single crystals

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Andreev, A ^a   Grmela, L ^a   Moravec, P ^b   Bosman, G ^c   Sikula, J ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CDTE; CDTE CRYSTALS; CONTACT AREAS; EXPERIMENTAL STUDIES; EXPERIMENTAL VALUES; FREE CARRIERS; LOW CONCENTRATIONS; METAL-SEMICONDUCTOR JUNCTIONS; NOISE CHARACTERISTIC; NOISE MEASUREMENTS; P-TYPE; SEMI-INSULATING; THEORETICAL VALUES; TOTAL VALUES; TRAVELLING HEATER METHODS; VOLTAGE NOISE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; SEMICONDUCTOR JUNCTIONS; SPECTRAL DENSITY;

SINGLE CRYSTALS;

EID: 77951236318     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055016     Document Type: Article

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