Investigation of the origin of deep levels in CdTe doped with Bi

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Saucedo, E ^a   Franc, J ^b   Elhadidy, H ^b   Horodysky, P ^b   Ruiz, C M ^c   Bermudez V ^c   Sochinskii, N V ^d  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b CHARLES UNIVERSITY   (Czech Republic)

^c 6 quai Watier   (France)

^d INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CHARGE TRANSFER; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; LATTICE CONSTANTS; PHOTOLUMINESCENCE;

DONOR RECOMBINATION CENTERS; DOPANT CONCENTRATION; OCTAHEDRAL DISTORTION; SEMI-INSULATING STATE;

CADMIUM COMPOUNDS;

EID: 43949138607     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903512     Document Type: Article

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