SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 37, Issue 9, 2008, Pages 1219-1224

Thermoelectric effect spectroscopy and photoluminescence of high-resistivity CdTe:In

(7) Elhadidy, Hassan a Franc, Jan a Belas, Eduard a Hlídek, Pavel a Moravec, Pavel a Grill, Roman a Hoschl, Pavel a

a CHARLES UNIVERSITY (Czech Republic)

Author keywords

CdTe:In; Defect levels; Photoluminescence; Thermoelectric effect spectroscopy

Indexed keywords

AB INITIO CALCULATIONS; CAPTURE CROSS SECTIONS; CD VACANCY; CDTE:IN; DEFECT LEVELS; ENERGY RANGES; LOW CONCENTRATIONS; RECOMBINATION CENTERS; TECHNOLOGICAL PROCESSES; THERMOELECTRIC EFFECT SPECTROSCOPY; TRAP CHARGING; VERTICAL GRADIENT FREEZE METHODS;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CHLORINE COMPOUNDS; CRYSTALLOGRAPHY; LIGHT EMISSION; LUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM TELLURIDE;

CHARGE CARRIERS;

EID: 51849115480 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0471-y Document Type: Article

Times cited : (15)

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