Metal-semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 528-532

  Gnatyuk, V A ^a   Aoki, T ^b   Hatanaka, Y ^c   Vlasenko, O I ^a  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b SHIZUOKA UNIVERSITY   (Japan)

^c AICHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Barrier structure; CdTe crystal; Current voltage characteristic; Doping; Laser irradiation; Nuclear detector

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRODEPOSITION; LASER BEAM EFFECTS; LASER PULSES; SEMICONDUCTING CADMIUM TELLURIDE; SURFACE STRUCTURE;

BARRIER STRUCTURES; CDTE CRYSTALS; NUCLEAR DETECTORS; VACUUM EVAPORATION;

SURFACE TREATMENT;

EID: 15844389534     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.113     Document Type: Conference Paper

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