High aspect ratio micro- and nano-machining of silicon using time-multiplexed reactive ion etching

Journal of Micromechanics and Microengineering

Volumn 21, Issue 12, 2011, Pages

  Sanaee, Z ^a   Poudineh, M ^a   Abdolahad, M ^a   Mohajerzadeh, S ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SILICON ETCHING; ETCHING PROCESS; HIGH ASPECT RATIO; HIGH ETCH RATE; HIGH RATE; INDUCTIVE COUPLINGS; KNUDSEN; LOW-DENSITY PLASMAS; NANOMACHINING; REACTIVE ION; SILICON SUBSTRATES; TIME MULTIPLEXED; TRANSPORT MODELS;

ASPECT RATIO; ELECTROMAGNETIC INDUCTION; HYDROGEN; IONS; NANORODS; PASSIVATION; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE ION ETCHING;

EID: 84855456256     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/21/12/125012     Document Type: Article

References (22)

1. Wu B, Kumar A and Pamarthy S 2010 J. Appl. Phys. 108 051101
2. Maruyama T, Narukage T, Onuki R and Fujiwara N 2010 J. Vac. Sci. Technol. B 28 862-8
3. Abdolvand R and Ayazi F 2008 Sensors Actuators A 144 109-16
4. Tachi S, Tsujimoto K and Okudaira S 1988 Appl. Phys. Lett. 52 616
5. Addae-Mensah K A, Retterer S, Opalenik S R, Thomas D, Lavrik N V and Wikswo J P 2010 J. Microelectromech. Syst. 19 64-74
6. Wang X, Chen Y, Wang L and Cui Z 2008 J. Microelectron. Eng. 85 1015-7
7. Belen R J, Gomez S, Kiehlbauch M and Aydil E S 2006 J. Vac. Sci. Technol. A 24 350
8. Gomez S, Belen R J, Kiehlbauch M and Aydil E S 2005 J. Vac. Sci. Technol. A 23 1592
9. Gomez S, Belen R J, Kiehlbauch M and Aydil E S 2004 J. Vac. Sci. Technol. A 22 606-14
10. Marty F, Rousseau L, Saadany B, Mercier B, Français O, Mita Y and Bourouina T 2005 Microelectr. J. 36 673-7
11. Sammak A, Azimi S, Izadi N, Hosseinieh B K and Mohajerzadeh S 2007 IEEE J. Microelectromech. Syst. 16 912-8
12. Azimi S, Mehran M, Amini A, Vali A, Mohajerzadeh S and Fathipour M 2010 J. Vac. Sci. Technol. B 28 1125-31
13. Morton K J, Nieberg G, Bai S and Chou S Y 2008 Nanotechnology 19 345301
14. Mukherjee P, Bruccoleri A, Heilmann R K, Schattenburg M L, Kaplan A F and Guo L J 2010 J. Vac. Sci. Technol. B 28 C6P70-5
15. Shiping G and Mengzhen C 1992 J. Vac. Sci. Technol. B 10 2708-10
16. Dussart R, Boufnichel M, Marcos G, Lefaucheux P, Basillais A, Benoit R, Tillocher T, Mellhaoui X, Estrade-Szwarckopf H and Ranson P 2004 J. Micromech. Microeng. 14 190-6
17. Campo A, Ch C and Turban G 1995 J. Vac. Sci. Technol. B 13 235
18. Yanagisawa M, Ogawa H and Horiike Y 2004 J. Appl. Phys. 43 19-22
19. Schaefer J A, Stucki F, Frankel D J, Gopel W and Lapeyre G J 1984 J. Vac. Sci. Technol. B 2 359
20. Ninomiya K, Suzuki K, Nishimatsu S and Okada O 1987 J. Appl. Phys. 62 1459
21. Coburn J W and Winters H F 1989 Appl. Phys. Lett. 55 2730
22. Kiihamaki J and Franssila S 1999 J. Vac. Sci. Technol. A 17 2280-5