Fabrication of nanoimprint template in Si with high etch rate by non-switch DRIE process

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 1015-1017

  Wang, Xudi ^a   Chen, Yifang ^b   Wang, Ling ^b   Cui, Zheng ^b  

^a HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Electron beam lithography; High etch rate; Non switch deep etching; Si template; Smooth sidewalls

Indexed keywords

ASPECT RATIO; GAS MIXTURES; NANOIMPRINT LITHOGRAPHY; OPTICAL FIBER FABRICATION; OPTIMIZATION; PHOTORESISTS; REACTIVE ION ETCHING;

CHAMBER PRESSURE; HIGH ETCH RATE; NON-SWITCH DEEP ETCHING; SMOOTH SIDEWALLS;

SILICON;

ASSEMBLY; ETCHING; LITHOGRAPHY; SILICON;

EID: 44149113052     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.073     Document Type: Article

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