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Volumn 28, Issue 6, 2010, Pages 1125-1131

Formation of three-dimensional and nanowall structures on silicon using a hydrogen-assisted high aspect ratio etching

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; REACTIVE ION ETCHING; SILICON; SUBSTRATES;

EID: 78650102922     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3497033     Document Type: Article
Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.