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Volumn 17, Issue 4, 1999, Pages 2280-2285

Pattern shape effects and artefacts in deep silicon etching

Author keywords

[No Author keywords available]

Indexed keywords

CIRCULAR HOLES; DEEP ETCHING; DEEP SILICON ETCHING; DIFFERENT SIZES; FEATURE SIZES; HIGH ETCH RATE; PATTERN SHAPE; RATIO DEPENDENCE; TEST STRUCTURE; VERTICAL PROFILE;

EID: 33645340155     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581761     Document Type: Conference Paper
Times cited : (85)

References (16)
  • 14
    • 78649801420 scopus 로고    scopus 로고
    • S. Franssila and J. Kiihamäki (unpublished)
    • S. Franssila and J. Kiihamäki (unpublished).
  • 15
    • 78649774907 scopus 로고    scopus 로고
    • U.S. Patent No. 5
    • F. Lärmer and A. Schilp, U.S. Patent No. 5,498,312 (1996).
    • (1996) , vol.498 , pp. 312
    • Lärmer, F.1    Schilp, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.