Deep vertical etching of silicon wafers using a hydrogenation-assisted reactive ion etching

Journal of Microelectromechanical Systems

Volumn 16, Issue 4, 2007, Pages 912-918

  Sammak, Amir ^a   Azimi, Soheil ^a   Izadi, Nima ^a   Hosseinieh, Bahar Khadem ^a   Mohajerzadeh, Shams ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Deep reactive ion etching (DRIE); Hydrogen plasma; Micromachining; Silicon wafers; Vertical etching

Indexed keywords

ASPECT RATIO; HYDROGENATION; PASSIVATION; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICON WAFERS; SUBSTRATES; THREE DIMENSIONAL;

DEEP REACTIVE ION ETCHING (DRIE); HYDROGEN PLASMA; SILICON SUBSTRATE; VERTICAL ETCHING;

SURFACE MICROMACHINING;

EID: 34548028949     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2007.901123     Document Type: Article

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