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Surface Science

Volumn 606, Issue 3-4, 2012, Pages 217-220

Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

(5) Gogneau, N a Balan, A b Ridene, M a Shukla, A b Ouerghi, A a

a UNIV PARIS SUD (France)

b SORBONNE UNIVERSITÉ (France)

Author keywords

AFM; Epitaxial graphene layer; Leed; SiC

Indexed keywords

AFM; CARBON ENRICHMENT; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; MICRO RAMAN SPECTROSCOPY; SIC; SILICON SUBSTRATES; STRUCTURATION; SYNTHESIS TEMPERATURES;

EPITAXIAL GROWTH; GRAPHENE; GRAPHITE; GRAPHITIZATION; LOW ENERGY ELECTRON DIFFRACTION; PYROLYSIS; RAMAN SPECTROSCOPY; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84855420207 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2011.09.021 Document Type: Article

Times cited : (20)

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