Evaluation of photoresponse in solution-processable ZnO thin film transistor for radiative sensor applications

Sensors and Actuators, A: Physical

Volumn 173, Issue 1, 2012, Pages 141-144

  Yakuphanoglu, Fahrettin ^a,b  

^a FIRAT UNIVERSITY   (Turkey)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Field effect mobility; Light photosensing; Thin film transistor

Indexed keywords

CHANNEL LAYERS; DEPLETION REGION; DEVICE PERFORMANCE; DIELECTRIC LAYER; FIELD-EFFECT MOBILITIES; GATE BIAS; GATE LAYERS; LIGHT ILLUMINATION; OPTOELECTRONIC APPLICATIONS; PHOTORESPONSES; SENSOR APPLICATIONS; SI SUBSTRATES; ZINC ACETATE PRECURSOR; ZNO; ZNO ACTIVE LAYERS; ZNO LAYERS;

DRAIN CURRENT; METALLIC FILMS; OPTICAL FILMS; SILICON COMPOUNDS; THIN FILMS; TRANSISTORS; ZINC COMPOUNDS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84655167827     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2011.11.019     Document Type: Article

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