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Volumn 84, Issue 19, 2004, Pages 3780-3782
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Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTRIC BREAKDOWN;
ELECTRON GAS;
GAIN MEASUREMENT;
INSULATING MATERIALS;
LIGHT ABSORPTION;
LIGHT MODULATION;
PHOTOCONDUCTIVITY;
PHOTOCURRENTS;
PHOTODETECTORS;
PHOTOTRANSISTORS;
PHOTOVOLTAIC EFFECTS;
QUANTUM EFFICIENCY;
TRANSCONDUCTANCE;
ERBIUM-DOPED FIBER AMPLIFIERS (EDFA);
METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS (MHEMT);
OPTICAL POWERS;
PHOTORESPONSE CHARACTERISTICS;
PHOTOTRANSISTOR INTERNAL GAINS;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 2942581427
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1739278 Document Type: Article |
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Times cited : (98)
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References (10)
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