Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Bae, H S ^a   Im, Seongil ^a   Song, J H ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTROCHEMISTRY; LEAKAGE CURRENTS; MICROWAVE ISOLATORS; SILICA; SPUTTERING; ULTRAVIOLET DETECTORS; ZINC OXIDE;

ENERGETIC IONS; FIELD MOBILITY; IMPLANTED DEVICES; PHOTO-TO-DARK CURRENT RATIO;

THIN FILM TRANSISTORS;

EID: 33746471712     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2212068     Document Type: Article

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