Crystallization kinetics of amorphous SiC films: Influence of substrate

Applied Surface Science

Volumn 252, Issue 5, 2005, Pages 1460-1470

  Schmidt, H ^a   Fotsing, E R ^a   Borchardt, G ^a   Chassagnon, R ^b   Chevalier, S ^b   Bruns, M ^c  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITÉ DE BOURGOGNE   (France)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Amorphous films; Crystallization kinetics; Silicon carbide; Sputter deposition

Indexed keywords

CRYSTALLIZATION; ENTHALPY; MAGNETRON SPUTTERING; REACTION KINETICS; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SPUTTER DEPOSITION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ACTIVATION ENTHALPY; CRYSTALLIZATION KINETICS; SILICON SUBSTRATES;

AMORPHOUS FILMS;

EID: 27944448897     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.02.116     Document Type: Article

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