Crystallization of a-Si:H films by rapid thermal annealing

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 954-957

  Szekeres, A ^a   Gartner, M ^b   Vasiliu, F ^c   Marinov, M ^d   Beshkov, G ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^d INSTITUTE OF PHYSICAL CHEMISTRY   (Bulgaria)

Author keywords

Hydrogenated amorphous silicon; Rapid thermal annealing; Spectroscopic ellipsometry; Thin film

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELLIPSOMETRY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; THIN FILMS; VOLUME FRACTION; X RAY DIFFRACTION ANALYSIS;

SPECTROSCOPIC ELLIPSOMETRY;

AMORPHOUS SILICON;

EID: 0032068953     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00263-4     Document Type: Article

References (8)

1. T. Aoyama, Y. Mochizuki, G. Kawachi, S. Oikawa, K. Miyata, Jpn. J. Appl. Phys. 30 (1990) L84.
2. I.- W. Wu, A. Chiang, M. Fuse, L. Öveçcoglu, T. Huang, J. Appl. Phys. 65 (1989) 4036.
3. D.A.G. Bruggeman, Ann. Phys. (Leipzig) 24 (1935) 636.
4. J. Baum, K.K. Gleason, A. Pines, A.N. Garroway, J.A. Reimer, Phys. Rev. Lett. 56 (1986) 1377.
5. E.A. Davis, J. Non-Cryst. Solids 198 (1996) 1.
6. T. Okada, T. Iwaki, T. Kasahara, K. Yamamoto, Jpn. J. Appl. Phys. 24 (1985) 161.
7. A. Danesh, I. Savatinova, A. Szekeres, Optics as a Key to High Technology, SPIE 1983 (1993) 1078.
8. Y.K. Yang, J.-S. Shin, R.-G. Hsieh, J.-Y. Gan, Appl. Phys. Lett. 64 (1994) 1567.