Thermal annealing of SiC thin films with varying stoichiometry

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 355-360

  Kuenle, Matthias ^a   Janz, Stefan ^a   Eibl, Oliver ^b   Berthold, Christoph ^b   Presser, Volker ^b   Nickel, Klaus Georg ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

Annealing; SiC; Thin films

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NANOCRYSTALS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SILICON CARBIDE; STOICHIOMETRY; X RAY DIFFRACTION;

A-SIC:H; ANNEALING; FOURIER; HYDROGENATED SILICON CARBIDE; INFRARED AND RAMAN SPECTROSCOPY; SIC FILMS; SIC THIN FILMS; THERMAL-ANNEALING; THIN-FILMS; X- RAY DIFFRACTIONS;

THIN FILMS;

EID: 67349174565     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.056     Document Type: Article

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