Kinetics of si and ge nanowires growth through electron beam evaporation

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Artoni, Pietro ^a,b   Pecora, Emanuele Francesco ^a,b,c   Irrera, Alessia ^a   Priolo, Francesco ^a,b  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c CENTRO SICILIANO DI FISICA NUCLEARE E STRUTTURA DELLA MATERIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; BINARY ALLOYS; ELECTRON BEAMS; EUTECTICS; EVAPORATION; GOLD ALLOYS; NANOWIRES; PHYSICAL VAPOR DEPOSITION; SILICON; SILICON ALLOYS; GERMANIUM; PHASE DIAGRAMS; PHASE TRANSITIONS;

CRYSTALLINE STRUCTURE; ELECTRON BEAM EVAPORATION; EUTECTIC TEMPERATURE; GROWTH CONDITIONS; KINETICS BEHAVIORS; MICROSCOPIC GROWTH; SI AND GE NANOWIRES; TEMPERATURE RANGE; FLUENCES;

GROWTH KINETICS;

EID: 84255173214     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-162     Document Type: Article

References (27)

1. Cui Y, Zhong Z, Wang D, Wang WU, Lieber CM: High performance silicon nanowire field effect transistors. Nano Lett 2003, 3:149.
2. Zhou X, Dayeh SA, Aplin D, Wang D, Yu ET: Direct observation of ballistic and drift carrier transport regimes in InAs nanowires. Appl Phys Lett 2006, 89:053113.
3. Huang Y, Duan X, Cui Y, Lauhon LJ, Kim K, Lieber CM: Logic gates and computation from assembled nanowire building blocks. Science 2001, 294:1313.
4. 2-catalyzed silicon nanowires. Nano Lett 2006, 6:2140.
5. Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Room-temperature ultraviolet nanowire nanolasers. Science 2001, 292:1897.
6. Ahn JH, Park J: Efficient visible light detection using individual germanium nanowire field effect transistors. Appl Phys Lett 2007, 91:162102.
7. Kayes BM, Atwater HA, Lewis NS: Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells. J Appl Phys 2005, 97:114302.
8. Tian B, Zheng X, Kempa TJ, Fang Y, Yu N, Yu G, Huang J, Lieber CM:.Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 2007, 449:885.
9. Tian B, Kempa TJ, Lieber CM: Single nanowire photovoltaics. Chem Soc Rev.2009,38:16.
10. Chan CK, Peng H, Liu G, McIlwrath K, Zhang XF, Huggins RA, Cui Y: High-.performance lithium battery anodes using silicon nanowires. Nat Nanotechnol 2008, 3:31.
11. Claeys CL, Simoen E: Germanium-Based Technologies: From Materials to.Devices Oxford: Elsevier; 2007.
12. Wagner RS, Ellis WC: Vapor-liquid-solid mechanism of single crystal.growth. Appl Phys Lett 1964, 4:89.
13. Hannon JB, Kodambaka S, Ross FM, Tromp RM: The influence of the.surface migration of gold on the growth of silicon nanowires. Nature 2006,440:69.
14. Irrera A, Pecora EF, Priolo F: Control of growth mechanisms and.orientation in epitaxial Si nanowires grown by electron beam.evaporation. Nanotechnology 2009, 20:135601.
15. Pecora EF, Irrera A, Artoni P, Boninelli S, Bongiorno C, Spinella C, Priolo F:.eteroepitaxial growth and faceting of Ge nanowires on Si(111) by electron-beam evaporation. Electrochem Solid State Lett 2010, 13:K53.
16. [http://www.asminternational.org].
17. Lugstein A, Hyun YJ, Steinmar M, Dielacher B, Hauer G, Bertagnolli E: Some.aspects of substrate pretreatment for epitaxial Si nanowire growth. Nanotechnology 2008, 19:485606.
18. Pecora EF, Irrera A, Priolo F: Influence of O contamination and Au cluster.properties on the structural features of Si nanowires. Thin Solid Films 2010,518:2562.
19. Dubrovskii VG, Sibirev NV, Harmand JC, Glas F: Growth kinetics and crystal.structure of semiconductor nanowires. Phys Rev B 2008, 78:235301.
20. Werner P, Zakharov ND, Gerth G, Shubert L, Gosele U: On the formation of,Si nanowires by molecular beam epitaxy. Int J Mater Res 2006, 97:1008.
21. Schubert L, Werner P, Zakharov ND, Gerth G, Kolb FM, Long L, Gosele U,.Tan TY: Silicon nanowhiskers grown on (111)Si substrates by molecular-beam epitaxy. Appl Phys Lett 2004, 84:4968.
22. Sivakov V, Heyroth F, Falk F, Andra G, Christiansen S: Silicon nanowire.growth by electron beam evaporation: kinetic and energetic contributions to the growth morphology. J Cryst Growth 2007, 300:288.
23. Sivakov V, Andra G, Gosele U, Christiansen S: Epitaxial vapor-liquid-solid.growth of silicon nano-whiskers by electron beam evaporation. Phys Status Solidi A 2006, 203:3692.
24. Cherepanov V, Voigtlander B: Influence of material, surface reconstruction,.and strain on diffusion at the Ge(111) surface. Phys Rev B 2004, 69:125331.
25. 28Si implantation of Ge crystals. Solid State Commun 1977, 21:1019.
26. Olson GL, Roth J: Kinetics of solid phase crystallization in amorphous.silicon. Mater Sci Rep 1988, 3:1.
27. Zakharov ND, Werner P, Gerth G, Schubert L, Sokolov L, Gosele U: Growth.phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy. J Cryst Growth 2006, 290:6.