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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 6, 2011, Pages

Manipulation of polycrystalline TiO 2 carrier concentration via electrically active native defects

(2) Sellers, Meredith C K a Seebauer, Edmund G a

a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; CATALYTIC APPLICATIONS; DEFECT ENGINEERING; ELECTRICAL ACTIVITIES; ELECTRICAL CHARACTERIZATION; INTERGRANULAR; MICRO-ELECTRONIC DEVICES; NATIVE DEFECT; POLYCRYSTALLINE; POLYCRYSTALLINE METALS; POST TREATMENT; SCHOTTKY; SCHOTTKY BARRIERS; SEMICONDUCTING METAL OXIDES; SURFACE AREA; TIO; VOID VOLUME; WIDE-BAND-GAP SEMICONDUCTOR;

CONCENTRATION (PROCESS); ELECTRICAL ENGINEERING; GRAIN BOUNDARIES; MICROELECTRONICS; POINT DEFECTS; SCHOTTKY BARRIER DIODES; TITANIUM DIOXIDE;

CARRIER CONCENTRATION;

EID: 84255170595 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3635373 Document Type: Article

Times cited : (15)

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