Relationship between electrical activity and grain boundary structural configuration in polycrystalline silicon

Interface Science

Volumn 7, Issue 2, 1999, Pages 197-205

  Wang, Zhan Jie ^a,c   Tsurekawa, Sadahiro ^a   Ikeda, Kenji ^b   Sekiguchi, Takashi ^b   Watanabe, Tadao ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL IMPURITIES; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON ENERGY LEVELS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

CARRIER RECOMBINATION; COINCIDENCE SITE LATTICE; ELECTRON BACKSCATTERED DIFFRACTION PATTERN; ELECTRON BEAM INDUCED CURRENT TECHNIQUE; GRAIN BOUNDARY INCLINATION; MISORIENTATION; ORIENTATION IMAGING MICROSCOPE SYSTEM;

SEMICONDUCTING SILICON;

EID: 0033171751     PISSN: 09277056     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008796005240     Document Type: Article

References (28)

1. H.J. Moller, Progress in Materials Science 35, 205 (1991).
2. K. Yang, G.H. Schwuttke, and T.F. Ciszek, J. Crystal Growth 50, 301-310 (1980).
3. H.F. Matare, J. Appl. Phys. 56, 2605-2631 (1984).
4. I. Nakamichi, J. Sci. Hiroshima Univ. A54, 49-84 (1990).
5. G. Poullain, A. Bary, B. Mercey, P. Lay, J.-L. Chermant, and G. Nouet, Proc. of JIMS-4, Trans. Jpn. Inst. Met. Suppl. 27, 1069-1076 (1986).
6. A. Buis, Y.-S. Oei, and F.W. Schapink, Proc. of JIMS-4, Trans. Jpn. Inst. Met. Suppl. 27, 221-228 (1986).
7. K. Kaneko, J. Masuda, and K. Tabata, Bull. Jpn. Inst. Met. 28, 664-671 (1989).
8. R. Rizk and G. Nouet, Interface Sci. 4, 303-316 (1997).
9. A. Fedotov, B. Evtodyi, L. Fionova, Yu. Ilyashuk, E. Katz, and L. Polyak, Phys. Stat. Sol. (a) 119, 523-534 (1990).
10. A. Fedotov, B. Evtodyi, L. Fionova, Yu. Ilyashuk, E. Katz, and L. Polyak, J. Crystal Growth 104, 186-190 (1990).
11. S. Kusanagi, T. Sekiguchi, B. Shen, and K. Sumino, Mater. Sci. Tech. 11, 685-690 (1995).
12. B. Shen, S. Kusanagi, J. Jablonski, and K. Sumino, J. Appl. Phys. 76, 4540-4546 (1994).
13. Z.J. Radzinski, T.Q. Zhou, A. Buczkowski, G.A. Rozonyi, D. Flinn, L.G. Hellwig, and J.A. Ross, Appl. Phys. Lett. 60, 1096-1098 (1992).
14. V. Randle, The Measurement of Grain Boundary Geometry (Institute of Physics Publishing, Bristol and Philadelphia, 1993), pp. 86-89.
15. A.V. Andreyeva, G.I. Salnikov, and L.K. Fionova, Acta Met. 26, 1331-1336 (1978).
16. T. Sekiguchi and K. Sumino, Rev. Sci. Instrum. 66, 4277-4282 (1995).
17. X. Zhao, T. Watanabe, K. Hirano, L. Fionova, and Yu. Lisovski, Proc. the 11th Intern. Conf. on Textures of Materials, 1426-1431 (1996).
18. A. Bary and G. Nouet, J. Appl. Phys. 63, 435-438 (1988).
19. A.P. Sutton and R.W. Balluffi, Interface in Crystalline Materials (Oxford Science Publications, 1995).
20. B. Cunningham, H. Strunk, and D. Ast, Appl. Phys. Letters 40, 237-239 (1982).
21. Y.L. Maurice, Rev. Phys. Applique 22, 613-621 (1987).
22. A. Ihlal and G. Nouet, in Springer Proceedings in Physics, edited by J.H. Werner, H.J. Moller, and H.P. Strunk (1989), Vol. 35, pp. 77-82.
23. N. Tabet, C. Monty, and Y. Marfaing, in Springer Proceedings in Physics, edited by J.H. Werner, H.J. Moller, and H.P. Strunk (1989), Vol. 35, pp. 89-94.
24. N.V. Abrosimov, A.V. Bashenov, and V.A. Tatarchenko, J. Crystal Growth 82, 203-208 (1987).
25. W. Shockley and W.T. Read, Jr., Phys. Rev. 87, 835-842 (1952).
26. R.N. Hall, Phys. Rev. 87, 387 (1959).
27. T. Sekiguchi, B. Shen, T. Watanabe, and K. Sumino, Mater. Sci. Eng. B42, 235-239 (1996).
28. A.T. Paxton and A.P. Sutton, Acta Metall. 37, 1693-1715 (1989).