Measurement method for carrier concentration in TiO2 via the Mott-Schottky approach

Thin Solid Films

Volumn 519, Issue 7, 2011, Pages 2103-2110

  Sellers, Meredith C K ^a   Seebauer, Edmund G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Anatase; Atomic layer deposition; Capacitance voltage; Carrier concentration; Metal oxide semiconductor; Titanium oxide

Indexed keywords

ANATASE; ANATASE TIO; ATOMIC LAYER; CAPACITANCE VOLTAGE MEASUREMENTS; CAPACITANCE-VOLTAGE; CHEMICAL COMPOSITIONS; CRYSTALLINITIES; DEVICE PERFORMANCE; DOPED-TIO; DOPING LEVELS; DYE-SENSITIZED SOLAR CELL; FREE CARRIER CONCENTRATION; INTEGRATED CIRCUIT APPLICATIONS; MEASUREMENT METHODS; METAL OXIDE SEMICONDUCTOR; METAL TYPES; METROLOGY METHODS; MOTT-SCHOTTKY; POLYCRYSTALLINE; RIGOROUS METHODOLOGIES; SCHOTTKY DIODES; SOURCE MATERIAL; SUBSTRATE TYPES; SURFACE AND INTERFACES; TETRAMETHYL; TIO;

ATOMIC LAYER DEPOSITION; ATOMS; CAPACITANCE; CHROMIUM; CONCENTRATION (PROCESS); MANGANESE; METALLIC COMPOUNDS; METALS; MOS DEVICES; NIOBIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SOLAR CELLS; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES; TRANSISTORS;

CARRIER CONCENTRATION;

EID: 78751647203     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.10.071     Document Type: Article

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