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Volumn 288, Issue 1, 2006, Pages 18-22

Depth dependence of optical property beyond the critical thickness of an InGaN film

(10) Teng, Chih Chung a Wang, Hsiang Chen a Tang, Tsung Yi a Lu, Yen Cheng a Cheng, Yung Chen a Yang, C C a Ma, Kung Jen b Wang, Wei Ming a Hsu, Chi Wei a Chen, L C a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b CHUNG HUA UNIVERSITY (Taiwan)

Author keywords

A1. Segregation; B1. Nitride; B3. Light emitting diodes

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; NITRIDES; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEGREGATION (METALLOGRAPHY);

CRITICAL THICKNESS; NANO-CLUSTERS; QUANTUM-CONFINED STARK EFFECT; RESIDUAL STRAIN;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31644438017 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.012 Document Type: Conference Paper

Times cited : (6)

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