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Volumn 228, Issue 1, 2001, Pages 59-64

Depth resolved studies of indium content and strain in InGaN layers

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Indexed keywords


EID: 18044387855     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<59::AID-PSSB59>3.0.CO;2-A     Document Type: Article
Times cited : (9)

References (14)
  • 1
    • 0003987639 scopus 로고    scopus 로고
    • Group III Nitride Semiconductor Compounds, Physics and Applications
    • Oxford Science Publications, Oxford
    • B. GIL (Ed.), Group III Nitride Semiconductor Compounds, Physics and Applications. Series on Semiconductor Science and Technology, Vol. 6, Oxford Science Publications, Oxford 1998.
    • (1998) Series on Semiconductor Science and Technology , vol.6
    • Gil, B.1
  • 7
    • 0003158486 scopus 로고
    • Eds. A. G. CULLIS et al., IOP Publ., Bristol
    • E. NAPCHAN and D. B. HOLT, Inst. Phys. Conf. Ser., No. 87, Eds. A. G. CULLIS et al., IOP Publ., Bristol 1987 (p. 733).
    • (1987) Inst. Phys. Conf. Ser. , vol.87 , pp. 733
    • Napchan, E.1    Holt, D.B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.