Towards future VLSI interconnects using aligned carbon nanotubes

2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, VLSI-SoC 2011

Volumn , Issue , 2011, Pages 248-253

  Chai, Yang ^a   Sun, Minghui ^a   Xiao, Zhiyong ^a   Li, Yuan ^a   Zhang, Min ^a   Chan, Philip C H ^a,b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

breakdown; carbon nanotube (CNT); chemical vapor deposition (CVD); contact resistance; copper (Cu); electro migration (EM); interconnect; interface; reliability

Indexed keywords

ALIGNED CARBON NANOTUBES; ALIGNED CNTS; BREAKDOWN; CHEMICAL VAPOR; CONTROLLED GROWTH; COPPER INTERCONNECTS; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTIVITY; ELECTRO-MIGRATION (EM); FEATURE SIZES; IC INTERCONNECT; IC TECHNOLOGY; INTERCONNECT; NANO SCALE; SCALE DOWN; THEORETICAL PREDICTION; VLSI INTERCONNECTS;

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CARBON; CHEMICAL VAPOR DEPOSITION; CONTACT RESISTANCE; COPPER; ELECTRIC CONDUCTIVITY; INTERCONNECTION NETWORKS; INTERFACES (MATERIALS); PROGRAMMABLE LOGIC CONTROLLERS; RELIABILITY;

CARBON NANOTUBES;

EID: 83755172108     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSISoC.2011.6081646     Document Type: Conference Paper

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